Backside thinning of image array devices

Radiant energy – Electron energy analysis

Reexamination Certificate

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C250S338400, C257S443000

Reexamination Certificate

active

07005637

ABSTRACT:
Backthinning in an area selective manner is applied to imaging sensors12for use in electron bombarded devices. A further arrangement results in an array of collimators51aligned with pixels42or groups of pixels providing improved image contrast of such image sensor. Provision of a thin P-doped layer52on the illuminated rear surface provides both a diffusion barrier resulting in improved resolution and a functional shield for reference pixels. A gradient in concentration of P-doped layer52optimizes electron collection at the pixel array.

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