Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Patent
1992-06-26
1994-08-09
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
257622, H01L 2978, H01L 2944
Patent
active
053369300
ABSTRACT:
An additional layer of electrically insulating material is added to the backside of thin wafers, especially wafers made from brittle semiconductor material such as gallium arsenide and comprising integrated circuits of, for example, the microwave monolithic integrated circuit type. The added layer of material is used to add mechanical rigidity and abuse tolerance to the otherwise quite fragile wafer, and is especially useful during probe testing of circuit die located on these fragile wafers and in the steps preceding and following probe testing. Preferably, the added layer is made from silicon nitride or silicon dioxide, or one of several diamond-related materials. The former materials provide the advantage of ready availability, low cost, and possibly already accomplished use in the wafer's fabrication; the latter diamond-related materials have the significant advantages of notable hardness, along with desirable heat conducting properties. The disclosed additional layer may be used only temporarily during the manufacturing and fabrication sequence, in which case its removal is accomplished prior to wafer scribing and breaking, or may be allowed to remain on the completed die.
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Crane Sara W.
Hollins Gerald B.
Kundert Thomas L.
Meier Stephen D.
The United States of America as represented by the Secretary of
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