Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2011-08-02
2011-08-02
Ngo, Ngan (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S447000, C257S448000, C257S459000, C257S460000, C257SE31113, C257SE31127
Reexamination Certificate
active
07989907
ABSTRACT:
Provided is a backside-illuminated solid-state image pickup device capable of allowing peripheral circuits to produce stable waveforms and thereby achieving image characteristics with less noise, the device including: a first-conductivity-type semiconductor layer having a first principal surface and a second principal surface opposed to the first principal surface and also having a pixel area and an analog circuit area; a first P type area formed to lie between the second principal surface and the first principal surface in the analog circuit area; a metal layer formed at least partially on the second principal surface of the first P type area; a VSS electrode electrically connected to the metal layer; a photo-conversion area formed in the pixel area and used to accumulate electric charges generated by photoelectric conversion; and a microlens provided on the second principal surface in the pixel area so as to correspond to the photo-conversion area.
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Kabushiki Kaisha Toshiba
Ngo Ngan
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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