Backside-illuminated solid-state image pickup device

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

Reexamination Certificate

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Details

C257S447000, C257S448000, C257S459000, C257S460000, C257SE31113, C257SE31127

Reexamination Certificate

active

07989907

ABSTRACT:
Provided is a backside-illuminated solid-state image pickup device capable of allowing peripheral circuits to produce stable waveforms and thereby achieving image characteristics with less noise, the device including: a first-conductivity-type semiconductor layer having a first principal surface and a second principal surface opposed to the first principal surface and also having a pixel area and an analog circuit area; a first P type area formed to lie between the second principal surface and the first principal surface in the analog circuit area; a metal layer formed at least partially on the second principal surface of the first P type area; a VSS electrode electrically connected to the metal layer; a photo-conversion area formed in the pixel area and used to accumulate electric charges generated by photoelectric conversion; and a microlens provided on the second principal surface in the pixel area so as to correspond to the photo-conversion area.

REFERENCES:
patent: 2009/0197365 (2009-08-01), Kim et al.
patent: 2009/0200585 (2009-08-01), Nozaki et al.
patent: 2010/0109113 (2010-05-01), Jang
patent: 2010/0116971 (2010-05-01), McCarten et al.
patent: 2010/0133635 (2010-06-01), Lee et al.
patent: 2010/0193845 (2010-08-01), Roy et al.
patent: 2010/0238331 (2010-09-01), Umebayashi et al.
patent: 2010/0291730 (2010-11-01), Uya et al.
patent: 2010/0327391 (2010-12-01), McCarten et al.
patent: 2010/0330728 (2010-12-01), McCarten et al.
patent: 2006-32497 (2006-02-01), None

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