Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2004-07-22
2008-09-02
Warren, Matthew E (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S433000, C257S434000, C257S447000, C257SE31117, C257SE31119
Reexamination Certificate
active
07420257
ABSTRACT:
The present invention provides a back illuminated photodetector having a sufficiently small package as well as being capable of suppressing the scattering of to-be-detected light. A back illuminated photodiode1comprises an N-type semiconductor substrate10, a P+-type doped semiconductor region11, a recessed portion12, and a coating layer13. In the surface layer on the upper surface S1side of the N-type semiconductor substrate10is formed the P+-type doped semiconductor region11. In the rear surface S2of the N-type semiconductor substrate10and in an area opposite the P+-type doped semiconductor region11is formed the recessed portion12that functions as an incident part for to-be-detected light. Also, on the rear surface S2is provided the coating layer13for transmitting to-be-detected light that is made incident into the recessed portion12. The coating layer13is here arranged in such a manner that the portion provided on the recessed portion12is sunk lower than the portion provided on the outer edge portion14of the recessed portion12.
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Drinker Biddle & Reath LLP
Hamamatsu Photonics K.K.
Warren Matthew E
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