Backside illuminated MSM device

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

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257184, 257446, 257448, 257466, H01L 3100

Patent

active

055414389

ABSTRACT:
An improved Metal Semiconductor Metal (MSM) photodiode device and a fabrication process for realizing this device. The improved photodiode device employs frontside electrodes and backside illumination to avoid active area shadowing in the device. This configuration is achieved through a device fabrication sequence which involves substrate removal--and replacement at the device's opposed frontside surface using such media as an epoxy adhesive. The disclosed device uses gallium arsenide semiconductor materials that are lattice determined by an indium phosphide sacrificial initial substrate, in order to select a desired input energy spectral range.

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patent: 5254868 (1993-10-01), Saito
patent: 5494833 (1996-02-01), Martin et al.
Darling et al., "Epitaxial n+ Layer GaAs Mesa-Finger Interdigital Surface Photodetectors," IEEE Electron Device Letters, vol. 10, No. 10, Oct. 1989, pp. 461-463.
Jong-Wook Seo et al., "A Comparative Study of Metal-Semiconductor-Metal Photodetectors on GaAs with Indium-Tin-Oxide and Ti/Au Electrodes," IEEE Photonics Technology Letters, vol. 4, No. 8, Aug. 1992, pp. 888-890.

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