Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2011-03-08
2011-03-08
Sefer, Ahmed (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S292000, C438S059000
Reexamination Certificate
active
07902618
ABSTRACT:
A backside illuminated imaging pixel with improved angular response includes a semiconductor layer having a front and a back surface. The imaging pixel also includes a photodiode region formed in the semiconductor layer. The photodiode region includes a first and a second n-region. The first n-region has a centerline projecting between the front and back surfaces of the semiconductor layer. The second n-region is disposed between the first n-region and the back surface of the semiconductor layer such that the second n-region is offset from the centerline of the first n-region.
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PCT/US2009/064071—International Search Report and Written Opinion, dated Feb. 26, 2010. (12 pages).
Mao Duli
Qian Yin
Rhodes Howard E.
Tai Hsin-chih
Venezia Vincent
Blakely , Sokoloff, Taylor & Zafman LLP
Omni Vision Technologies, Inc.
Sefer Ahmed
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