Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate
2008-06-19
2011-12-06
Louie, Wai Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
C257S225000, C257S059000, C257S072000, C257S292000, C257S291000, C257S273000, C257S098000, C257S080000
Reexamination Certificate
active
08072007
ABSTRACT:
A backside-illuminated imaging device is provided and includes: a plurality of charge accumulating areas in the semiconductor substrate which accumulate the electric charges; and a plurality of filters above a backside surface of the semiconductor substrate corresponding to the respective charge accumulating areas. The plurality of filters includes different color filters which transmit different color components of the light from one another and luminance filters each having a spectral characteristic correlated with a luminance component of the light, the plurality of charge accumulating areas includes first charge accumulating areas corresponding to the respective color filters, and second charge accumulating areas corresponding to the respective luminance filters, and the second charge accumulating areas includes a third charge accumulating area having a size larger than those of the first accumulating areas.
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Birch & Stewart Kolasch & Birch, LLP
Fujifilm Corporation
Jahan Bilkis
Louie Wai Sing
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