Backside illuminated image sensor with shallow backside...

Details Backside illuminated image sensor with shallow backside... Backside illuminated image sensor with shallow backside...

2010-11-11

2011-12-13

Chen, Jack (Department: 2893)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S070000, C438S401000, C438S455000, C257SE21617

Reexamination Certificate

active

08076170

ABSTRACT:
A backside illuminated image sensor comprises a sensor layer implementing a plurality of photosensitive elements of a pixel array, an oxide layer adjacent a backside surface of the sensor layer, and at least one dielectric layer adjacent a frontside surface of the sensor layer. The sensor layer further comprises a plurality of backside trenches formed in the backside surface of the sensor layer and arranged to provide isolation between respective pairs of the photosensitive elements. The backside trenches have corresponding backside field isolation implant regions formed in the sensor layer, and the resulting structure provides reductions in carrier recombination and crosstalk between adjacent photosensitive elements. The image sensor may be implemented in a digital camera or other type of digital imaging device.

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T. Joy et al, “Development of a Production-Ready, Back-Illuminated CMOS Image Sensor with Small Pixels,” IEEE IEDM, Dec. 2007, pp. 1007-1010.

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