Backside illuminated image sensor with reduced dark current

Details Backside illuminated image sensor with reduced dark current Backside illuminated image sensor with reduced dark current

2011-03-29

2011-03-29

Bryant, Kiesha R (Department: 2891)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S066000, C438S067000, C438S075000, C438S401000, C257SE21617

Reexamination Certificate

active

07915067

ABSTRACT:
A backside illuminated image sensor comprises a sensor layer implementing a plurality of photosensitive elements of a pixel array, and an oxide layer adjacent a backside surface of the sensor layer. The sensor layer comprises a seed layer and an epitaxial layer formed over the seed layer, with the seed layer having a cross-sectional doping profile in which a designated dopant is substantially confined to a pixel array area of the sensor layer. The doping profile advantageously reduces dark current generated at an interface between the sensor layer and the oxide layer. The image sensor may be implemented in a digital camera or other type of digital imaging device.

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T. Joy et al., “Development of a Production-Ready, Back-Illuminated CMOS Image Sensor with Small Pixels,” IEEE IEDM, Dec. 2007, pp. 1007-1010.

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