Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Patent
1997-06-11
1999-05-25
Bowers, Charles
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
438 60, 438787, 438960, 117 59, H01L 27148
Patent
active
059077670
ABSTRACT:
Disclosed is a backside-illuminated charge-coupled device imager, which has: a silicon substrate which includes a light-receiving region which is formed on the frontside of the silicon substrate and includes charge-coupled devices which are arranged one-dimensionally or two-dimensionally and has a thickness equal to or less than a pixel pitch, wherein light is supplied from the backside of the silicon substrate; wherein the light-receiving region of the silicon substrate is provided with a silicon layer with a thickness equal to or less than the pixel pitch and a silicon dioxide (SiO.sub.2) layer thicker than the silicon layer.
REFERENCES:
patent: 5433168 (1995-07-01), Yonehara
S.R. Shortes et al., "Characteristics of thinned backside-illuminated charge-coupled device imagers", Applied Physics Letters, vol. 24, No. 11, Jun. 1, 1974, pp. 565-567.
G. A. Antcliffe et al, "A Backside Illuminated 400.times.400 Charge-Couple Device", IEEE Transactions on Electron Devices, vol. D-23, No. 11, Nov. 1976, pp. 1225-1232.
Bowers Charles
Christianson Keith
NEC Corporation
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