Metal treatment – Compositions – Heat treating
Patent
1984-07-02
1985-12-17
Saba, William G.
Metal treatment
Compositions
Heat treating
29576T, 29576W, 148174, 148175, 148DIG3, 148DIG24, 148DIG48, 148DIG60, 148DIG61, 148DIG71, 357 59, H01L 21263, H01L 21324
Patent
active
045590869
ABSTRACT:
There is disclosed a process and the resulting semiconductor wafer wherein the backside of the wafer has applied thereto a layer of polysilicon. Portions of this layer are exposed to an energy beam to recrystallize them into single crystal silicon fused to and extending from the underlying wafer. The recrystallized portions contact adjacent portions of the polysilicon layer, thereby providing a path for impurities migrating from the wafer to the polysilicon.
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Beyer et al., "Gettering and Barrier Technique", I.B.M. Tech. Discl. Bull., vol. 19, No. 6, Nov. 1976, pp. 2050-2051.
Poponiak et al, "Gettering Utilizing--Disordered Epitaxial Layer", I.B.M. Tech. Discl. Bull., vol. 19, No. 6, Nov. 1976, pp. 2052-2053.
Eastman Kodak Company
Saba William G.
Schmidt Dana M.
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