Backside gettering method employing a monocrystalline germanium-

Details Backside gettering method employing a monocrystalline germanium- Backside gettering method employing a monocrystalline germanium-

1989-12-27

1993-07-20

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437126, H01L 2120

Patent

active

052293068

ABSTRACT:
A method for gettering metal atoms (28) from a subsequently contaminated silicon substrate (12) is disclosed. A smoothed or polished first surface (16) has a thin germanium silicon layer (20) deposited thereon. A silicon layer (24) is deposited onto the germanium silicon layer (20) to seal the layer (20) between the substrate (12) and the silicon layer (24). Electronic components (26) are fabricated on a second surface (14) of the silicon substrate (12) which causes the metal atoms (28) to contaminate the substrate as a result of contamination in normal processing (12). As the substrate (12) is heated during normal processing of the devices, metal atoms (28) in the substrate of a result of contamination, diffuse in the substrate (12) to the misfit dislocations at the germanium-silicon (20)/silicon interface.

REFERENCES:
patent: 3997368 (1976-12-01), Petroff et al.
patent: 4357183 (1982-11-01), Fan et al.
patent: 4608096 (1986-08-01), Hill
patent: 4962051 (1990-10-01), Liaw
patent: 4975387 (1990-12-01), Prokes et al.

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