Backside etch process chamber and method

Details Backside etch process chamber and method Backside etch process chamber and method

1997-01-23

1999-06-22

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

156345, 216 69, 438726, 438744, H01L 2100

Patent

active

059142782

ABSTRACT:
A modular semiconductor wafer processing system comprises a chamber with a wafer support and gas manifold structure that supplies reactive gases through a showerhead delivery system to one side of a wafer-being-processed and that exhausts both the reactive gases and a non-reactive gas flow. The other side of the wafer is protected from the reactive gases by evenly delivering the non-reactive gases from a platen close to the wafer. The gap between the wafer and platen, and the choice of non-reactive gas and its flow rate are adjusted to optimize the protection afforded to the wafer's one side while still allowing, for example, the stripping of a silicon nitride film from the wafer's other side.

REFERENCES:
patent: 4512283 (1985-04-01), Bonifield et al.
patent: 5213650 (1993-05-01), Wang et al.
patent: 5753566 (1998-05-01), Hwang

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