Measuring and testing – Specimen stress or strain – or testing by stress or strain... – Specified electrical sensor or system
Patent
1994-06-10
1996-04-30
Chilcot, Richard
Measuring and testing
Specimen stress or strain, or testing by stress or strain...
Specified electrical sensor or system
73754, H01L 2996
Patent
active
055114288
ABSTRACT:
A sensor microstructure contact scheme is provided for making backside electrical, mechanical, fluidic, or other contact to mechanical microstructures. The contact scheme is applicable to pressure sensors, shear stress sensors, flow rate sensors, temperature sensors, resonant microactuators, and other microsensors and microactuators. The contact scheme provides a microelectromechanical sensor body and support structure for backside contact of the sensor body, and features a support wafer substrate having one or more through-wafer vias each with a lateral span on the dimension of microns and a span that is more narrow at the wafer front surface than at the wafer back surface. An insulating film covers a portion of the support wafer substrate and sidewalls of the vias--with the lateral via span at the front surface being open. The front surface of the support wafer substrate is bonded to the front surface of a sensor body wafer substrate, such that contact of the front surface of the sensor body wafer substrate may be made through the support wafer substrate vias from the back surface of the support wafer substrate. The sensor body wafer substrate is adapted to define a mechanical sensor microstructure, and comprises a plurality of isolated substrate regions, each region corresponding to one of the support wafer substrate through-wafer vias. Each such region is circumscribed by an edge of the mechanical sensor microstructure and an isolating border region. Contact made through one of the support wafer substrate through-wafer vias to the corresponding one of the sensor body substrate regions is isolated and thereby prevented from making contact to any other sensor body substrate region.
REFERENCES:
patent: 4780572 (1988-10-01), Kondo et al.
patent: 4851371 (1989-07-01), Fisher et al.
patent: 4896098 (1990-01-01), Haritonidis et al.
patent: 4908693 (1990-03-01), Nishiguchi
patent: 5062302 (1991-11-01), Petersen et al.
patent: 5138414 (1992-08-01), Shinohara
patent: 5172205 (1992-12-01), French et al.
patent: 5199298 (1993-04-01), Ng et al.
patent: 5343064 (1994-08-01), Spangler et al.
patent: 5386142 (1995-01-01), Kurtz et al.
Patton et al., "Hydrophilic Membranes as Media for solid State Oxygen Sensors," Transducers '85, IEEE Int. Conf. on Solid-State Sensors and Actuators, p. 423, Phil., PA., Jun. 1985.
Sakai et al., "Ion sensitive FET with a silicon -insulator -silicon structure," Transducers '87, Int. Conf. on Solid-State Sensors and Actuators, pp. 711-713, Tokyo, Japan, Jun. 1987.
van den Vlekkert et al., "A pH-ISFET and an integrated pH-pressure sensor with back-side contacts," Sensors and Actuators, V. 14, pp. 165-176, 1988.
Hu et al., "Carbon dioxide gas-sensing electrode based on a pH-ISFET with back-side contacts," Sensors and Actuators, V. 17, pp. 275-278, 1989.
Kloeck et al., "A combined pH-pressure catheter for gastroenterological applications," Sensors and Actuators, V. 17, pp. 541-545, 1989.
Ewald et al., "Technology For Backside Contacted pH-sensitive ISFETs Embedded in a p-Well Structure," Sensors and Actuators, B1, pp. 335-340, 1990.
Sakai et al., "A Backside Contact ISFET with a Silicon-Insulator-Silicon Structure," Sensors and Actuators, B1, pp. 341-344, 1990.
Verlinden et al., "High Efficiency Backside contact Solar Cells with a Self-Aligned Process and New Text. Tech. for Si.," 10.sup.th Photovoltaic Solar Eng. Conf., pp. 246-249, Portugal, Apr. 1991.
Linder et al., "WaferStack-Technology," Abst., Eth Zurich, Inst. of Quantum Elect., Phys. Elect. Lab, Annual Report, 1992.
van den Vlekkert et al., "Multi-ion sensing device for horticultural appl. based upon chem. mod. and special packaging of ISFETs, " Sensors and Actuators B, N. 6, pp. 34-37, 1992.
Johansson et al., "A Three-dimensional Architecture for a Parallel Processing Photosensing Array," IEEE Trans. Biomed. Eng., V. 39, N. 12, pp. 1292-1297, Dec. 1992.
Nishiwaki et al., "Through-Hole contact (THC) integrated-type a-Si solar cell submodule by a laser photo-etching method," Solar Energy. Mat. and Solar Cells, V. 31, pp. 97-108, 1993.
Merlos et al., "Low Cost Fabrication Tech. for IC-compatible Backside Contacted ISFET's," Sensors and Their Applications VI, Manchester, UK, Sept. 1993.
Linder et al., "Fab. Tech. for Wafer Through-Hole Interconnections and Three-Dim. Stacks of Chips and Wafers," IEEE MEMs, pp. 349-354, Oiso, Japan, Jan. 1994.
Goldberg Howard D.
Schmidt Martin A.
Chilcot Richard
Lober Theresa A.
Massachusetts Institute of Technology
McCall Eric S.
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