Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2006-12-13
2009-08-18
Tran, Minh-Loan T (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S458000, C257S460000, C257SE31061
Reexamination Certificate
active
07576404
ABSTRACT:
A backlit photodiode array includes a semiconductor substrate having first and second main surfaces opposite to each other. A first dielectric layer is formed on the first main surface. First and second conductive vias are formed extending from the second main surface through the semiconductor substrate and the first dielectric layer. The first and second conductive vias are isolated from the semiconductor substrate by a second dielectric material. A first anode/cathode layer of a first conductivity is formed on the first dielectric layer and is electrically coupled to the first conductive via. An intrinsic semiconductor layer is formed on the first anode/cathode layer. A second anode/cathode layer of a second conductivity opposite to the first conductivity is formed on the intrinsic semiconductor layer and is electrically coupled to the second conductive via.
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Brogan Conor
Griffin Hugh J.
MacNamara Cormac
Wilson Robin
Icemos Technology Ltd.
Panitch Schwarze Belisario & Nadel LLP
Tran Minh-Loan T
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