Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2011-08-23
2011-08-23
Coleman, William D (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C362S097300
Reexamination Certificate
active
08003990
ABSTRACT:
The present invention provides a backlight having a uniform in-plane brightness distribution, the backlight having at least two dot light emitting devices of substantially similar color having at least two different brightness ranks into which the dot light emitting devices are classified in accordance with brightness, wherein each brightness rank comprises a predetermined range of brightness variations, arranged in a plane manner, wherein the plurality of dot light emitting devices are mounted in a plurality of blocks, each block having at least two dot light emitting devices of different brightness ranks, so that the number of the dot light emitting devices provided in each of the plurality of blocks is substantially uniform across the plurality of blocks and a total brightness associated with the brightness ranks of the dot light emitting devices provided in each of the plurality of blocks provides a substantially uniform brightness distribution across the plurality of blocks.
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English translation of Japanese Publication JP 2004-139876 A.
English translation of Japanese Publication JP 10-105082 A.
Coleman William D
Morrison & Foerster / LLP
Sharp Kabushiki Kaisha
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