Semiconductor device manufacturing: process – Making passive device
Reexamination Certificate
2011-06-28
2011-06-28
Nhu, David (Department: 2895)
Semiconductor device manufacturing: process
Making passive device
C438S238000, C438S680000, C257S288000, C257SE21004, C257SE21006, C257SE21170, C257SE21304, C257SE21645, C257SE21646, C257SE21657, C257SE21659
Reexamination Certificate
active
07968419
ABSTRACT:
A method is provided for forming a metal/semiconductor/metal (MSM) back-to-back Schottky diode from a silicon (Si) semiconductor. The method deposits a Si semiconductor layer between a bottom electrode and a top electrode, and forms a MSM diode having a threshold voltage, breakdown voltage, and on/off current ratio. The method is able to modify the threshold voltage, breakdown voltage, and on/off current ratio of the MSM diode in response to controlling the Si semiconductor layer thickness. Generally, both the threshold and breakdown voltage are increased in response to increasing the Si thickness. With respect to the on/off current ratio, there is an optimal thickness. The method is able to form an amorphous Si (a-Si) and polycrystalline Si (polySi) semiconductor layer using either chemical vapor deposition (CVD) or DC sputtering. The Si semiconductor can be doped with a Group V donor material, which decreases the threshold voltage and increases the breakdown voltage.
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Evans David R.
Hsu Sheng Teng
Li Tingkai
Law Office of Gerald Maliszewski
Maliszewski Gerald
Nhu David
Sharp Laboratories of America Inc.
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