Back-to-back diodes

Details Back-to-back diodes Back-to-back diodes

1984-11-14

1986-07-15

Edlow, Martin H.

357 2, 357 4, 357 76, H01L 2912, H01L 4500, H01L 2712, H01L 2332

Patent

active

046009353

ABSTRACT:
A back-to-back diode includes a substrate having five superimposed layers of hydrogenated amorphous silicon thereon. The first and fifth layers are of one conductivity type, the second and fourth layers are intrinsic, and the third layer is of the opposite conductivity type. The layers are all of the substantially the same thickness. A conductive layer contact is provided between the substrate and the first layer and a conductive layer contact is provided on the fifth layer. The intrinsic layers may include carbon alloyed with the hydrogenated amorphous silicon.

REFERENCES:
patent: 4064521 (1977-12-01), Carlson
patent: 4109271 (1978-08-01), Pankove
patent: 4385200 (1983-05-01), Hamakawa et al.
patent: 4409424 (1983-10-01), Devaud
patent: 4410902 (1983-10-01), Malik
patent: 4531142 (1985-07-01), Weyrich et al.

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