Back-side hydrogenation technique for defect passivation in sili

Details Back-side hydrogenation technique for defect passivation in sili Back-side hydrogenation technique for defect passivation in sili

1992-08-24

1994-04-19

Weisstuch, Aaron

Fishing, trapping, and vermin destroying

437 2, 437 4, 437939, 437942, 437980, 136258, 136261, 136290, 148DIG125, 148DIG128, 148DIG153, H01L 2126, H01L 3118

Patent

active

053045092

ABSTRACT:
A two-step back-side hydrogenation process includes the steps of first bombarding the back side of the silicon substrate with hydrogen ions with intensities and for a time sufficient to implant enough hydrogen atoms into the silicon substrate to potentially passivate substantially all of the defects and impurities in the silicon substrate, and then illuminating the silicon substrate with electromagnetic radiation to activate the implanted hydrogen, so that it can passivate the defects and impurities in the substrate. The illumination step also annihilates the hydrogen-induced defects. The illumination step is carried out according to a two-stage illumination schedule, the first or low-power stage of which subjects the substrate to electromagnetic radiation that has sufficient intensity to activate the implanted hydrogen, yet not drive the hydrogen from the substrate. The second or high-power illumination stage subjects the substrate to higher intensity electromagnetic radiation, which is sufficient to annihilate the hydrogen-induced defects and sinter/alloy the metal contacts.

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