Back side contact solar cell with doped polysilicon regions

Details Back side contact solar cell with doped polysilicon regions Back side contact solar cell with doped polysilicon regions

2008-11-18

2009-12-15

Michener, Jennifer K (Department: 1795)

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

C136S243000, C136S261000

Reexamination Certificate

active

07633006

ABSTRACT:
In one embodiment, a back side contact solar cell includes a tunnel oxide layer formed on a back side of a substrate. A polysilicon layer is formed on the tunnel oxide layer, and dopant sources are formed on the polysilicon layer. Dopants from the dopant sources are diffused into the polysilicon layer to form p-type and n-type regions therein. The p-type and n-type regions form p-n junctions that, among other advantages, allow for relatively high conversion efficiency.

REFERENCES:
patent: 3961997 (1976-06-01), Chu
patent: 4927770 (1990-05-01), Swanson
patent: 5030295 (1991-07-01), Swanson et al.
patent: 5053083 (1991-10-01), Sinton
patent: 5057439 (1991-10-01), Swanson et al.
patent: 5164019 (1992-11-01), Sinton
patent: 5360990 (1994-11-01), Swanson
patent: 5369291 (1994-11-01), Swanson
patent: 5641362 (1997-06-01), Meier
patent: 6274402 (2001-08-01), Verlinden et al.
patent: 6313395 (2001-11-01), Crane et al.
patent: 6333457 (2001-12-01), Mulligan et al.
patent: 6337283 (2002-01-01), Verlinden et al.
patent: 6387726 (2002-05-01), Verlinden et al.
patent: 6423568 (2002-07-01), Verlinden et al.
patent: 6998288 (2006-02-01), Smith et al.
patent: 7135350 (2006-11-01), Smith et al.
patent: 7468485 (2008-12-01), Swanson
W.P. Mulligan, et al., “A Flat-Plate Concentrator: Micro-Concentrator Design Overview”, 2000, 3 sheets, Proceedings of the 28th IEEE PVSC.
K. R. McIntosh, et al., “The Choice of Silicon Wafer for the Production of Low-Cost Rear-Contact Solar Cells”, May 2003, 4 sheets, Sunpower Corporation, Sunnyvale, CA.
P.J. Verlinden, et al., “Will We have a 20%-Efficient(PTC) Photovoltaic System?”, 2001, 6 sheets, Proceedings of the 17th Europe Photovoltaic Solar Energy Conference.
William P. Mulligan, et al.,“Development of Chip-Size Silicon Solar Cells”, 2000, 6 sheets, Proceedings of the 28th IEEE PVSC.
Akira Terao, et al., “A Mirror-Less Design for Micro-Concentrator Modules”, 2000, 4 sheets, Proceedings of the 28th IEEE PVSC.
P.J. Verlinden, et al., “Backside-Contact Silicon Solar Cells with Improved Efficiency for the '96 World Solar Challenge”, 1997, 5 sheets, Proceedings of the 15th EPSEC.
P.J. Verlinden, et al., “One-Year Comparison of a Concentrator Module with Silicon Point-Contact Solar Cell to a Fixed Flat Plate Module in Northern California”, 2000, 4 sheet, Proceedings of the 16th EPSEC.
Richard M. Swanson “The Promise of Concentrators”, 2000, Prog. Photovolt. Res. Appl. 8, pp. 93-111, Sunpower Corporation.
Ronald A. Sinton, et al., “Simplified Backside-Contact Solar Cells”, Feb. 1990, pp. 348-352, IEEE Transactions on Electron Devices, vol. 37. No. 2.
Ronald A. Sinton “Device Physics and Characterization of Silicon Point-Contact Solar Cells”, Feb. 1997, pp. 1-154, Stanford Electronics Laboratories, Stanford University, CA.
Richard Roland King “Studies of Oxide-Passivated Emitters in Silicon and Applications to Solar Cells”, Aug. 1990, pp. 1-200, (Thesis) Electrical Engineering Department of Stanford University, CA.

Affiliated with

Also associated with

Rating

Back side contact solar cell with doped polysilicon regions does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Back side contact solar cell with doped polysilicon regions, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Back side contact solar cell with doped polysilicon regions will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4063956