Back side contact solar cell with doped polysilicon regions

Details Back side contact solar cell with doped polysilicon regions Back side contact solar cell with doped polysilicon regions

2005-08-11

2008-12-23

Neckel, Alexa D. (Department: 1795)

Batteries: thermoelectric and photoelectric

Photoelectric

Reexamination Certificate

active

07468485

ABSTRACT:
In one embodiment, a back side contact solar cell includes a tunnel oxide layer formed on a back side of a substrate. A polysilicon layer is formed on the tunnel oxide layer, and dopant sources are formed on the polysilicon layer. Dopants from the dopant sources are diffused into the polysilicon layer to form p-type and n-type regions therein. The p-type and n-type regions form p-n junctions that, among other advantages, allow for relatively high conversion efficiency.

REFERENCES:
patent: 3961997 (1976-06-01), Chu
patent: 4927770 (1990-05-01), Swanson
patent: 5030295 (1991-07-01), Swanson et al.
patent: 5053083 (1991-10-01), Sinton
patent: 5057439 (1991-10-01), Swanson et al.
patent: 5164019 (1992-11-01), Sinton
patent: 5360990 (1994-11-01), Swanson
patent: 5369291 (1994-11-01), Swanson
patent: 5641362 (1997-06-01), Meier
patent: 6274402 (2001-08-01), Verlinden et al.
patent: 6313395 (2001-11-01), Crane et al.
patent: 6333457 (2001-12-01), Mulligan et al.
patent: 6337283 (2002-01-01), Verlinden et al.
patent: 6387726 (2002-05-01), Verlinden et al.
patent: 6423568 (2002-07-01), Verlinden et al.
patent: 6998288 (2006-02-01), Smith et al.
W.P. Mulligan, et al., “A Flat-Plate Concentrator: Micro-Concentrator Design Overview”, 2000, 3 sheets, Proceedings of the 28thIEEE PVSC.
Keith R. McIntosh, et al., “The Choice of Silicon Wafer for the Production of Low-Cost Rear-Contact Solar Cells”, May 2003, 4 sheets, Sunpower Corporation, Sunnyvale, CA.
P.J. Verlinden, et al., “Will We have a 20%-Efficient (PTC) Photovoltaic System?”, 2001, 6 sheets, Proceedings of the 17thEurope Photovoltaic Solar Engery Conference.
William P. Mulligan, et al., “Development of Chip-Size Silicon Solar Cells”, 2000, 6 sheets, Proceedings of the 28thIEEE PVSC.
Akira Terao, et al., “A Mirror-Less Design for Micro-Concentrator Modules”, 2000, 4 sheets, Proceedings of the 28thIEEE PVSC.
P.J. Verlinden, et al., “Backside-Contact Silicon Solar Cells with Improved Efficiency for the '96 World Solar Challenge”, 1997, 5 sheets, Proceedings of the 15thEPSEC.
P.J. Verlinden, et al., “One-Year Comparison of a Concentrator Module with Silicon Point-Contact Solar Cell to a Fixed Flat Plate Module in Northern California”, 2000, 4 sheet, Proceedings of the 16thEPSEC.
Richard M. Swanson “The Promise of Concentrators”, 2000, Prog. Photovolt. Res. Appl. 8, pp. 93-111.
Ronald A. Sinton, et al., “Simplified Backside-Contact Solar Cells”, Feb. 1990, pp. 348-352, IEEE Transactions on Electron Devices, vol. 37, No. 2.
Ronald A. Sinton “Device Physics and Characterization of Silicon Point-Contact Solar Cells”, Feb. 1997, pp. 1-154, Stanford Electronics Laboratories, Stanford University, CA.
Richard Roland King “Studies of Oxide-Passivated Emitters in Silicon and Applications to Solar Cells”, Aug. 1990, pp. 1-200, (Thesis) Electrical Engineering Department of Stanford University, CA.

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