Back junction photovoltaic solar cell

Details Back junction photovoltaic solar cell Back junction photovoltaic solar cell

1985-05-28

1987-05-19

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

136256, 357 30, H01L 3106

Patent

active

046670602

ABSTRACT:
A solar cell of novel construction is disclosed featuring the formation of a p-n junction at its rear surface. This allows for a reduction in series resistance and optimization of the p-n junction. The solar cell has a metallic front contact and is lightly doped to reduce contact resistance at the interface between the front contact and the front surface of the cell. The solar cell preferably is formed of either n-type or p-type silicon, with the p-n junction preferably formed therein by ion implantation. Preferably, the solar cell is about 50 micrometers thick and, possesses a conversion efficiency of at least 15% over an input intensity range of from about one to about 1,000 suns. The solar cell is particularly useful for concentrator solar cells intended for operation at high intensity (in excess of 500 suns).

REFERENCES:
patent: 4106047 (1978-08-01), Lindmayer
patent: 4131486 (1978-12-01), Brandhorst, Jr.
patent: 4131488 (1978-12-01), Lesk et al.
patent: 4348254 (1982-09-01), Lindmayer
patent: 4355196 (1982-10-01), Chai
P. G. Borden et al., "The V-Groove Solar Cell", 16th IEEE Photovoltaic Specialists Conf. (1982), pp. 574-577.
C. M. Garner et al., "An Interdigitated Back Contact Solar Cell With High-Current Collection", IEEE Electron Device Letters, vol. EDL-1 (1980), pp. 256-258.
R. I. Frank et al., "A Low Series Resistance Silicon Photovoltaic Cell for High Intensity Applications", 14th IEEE Photovoltaic Specialists Conf. (1980), pp. 423-430.

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