Back irradiation type light-receiving device and method of makin

Details Back irradiation type light-receiving device and method of makin Back irradiation type light-receiving device and method of makin

1997-10-10

2000-02-29

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257459, H01L 3100

Patent

active

060312742

ABSTRACT:
A back irradiation type light-receiving device, on which light is incident from the back side with respect to a charge-reading section of a semiconductor thin plate, is provided with a reinforcement member on the charge-reading section side. Electric signals are fed in and out from the charge-reading section by way of a polysilicon lead having a short wiring length and a low-resistance aluminum lead which is formed, after the completion of all the steps requiring a high-temperature treatment, so as to be physically and electrically direct-connected to the polysilicon lead. Accordingly, a charge generated in response to the received light can be read out with a high efficiency, while enabling a high-speed operation.

REFERENCES:
patent: 4278989 (1981-07-01), Baba et al.
patent: 4870475 (1989-09-01), Endo et al.
patent: 4923825 (1990-05-01), Blouke et al.
Patent Abstracts of Japan, vol. 095, No. 002, Mar. 31, 1995 & JP -6326293 A (Hamamatsu Photonics KK), Nov. 25, 1994.

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