Back irradiating type solid state imaging device

Details Back irradiating type solid state imaging device Back irradiating type solid state imaging device

2008-03-13

2010-12-28

Ho, Tu-Tu V (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

C257S226000, C257S214000, C257S229000, C257S460000, C257SE27161

Reexamination Certificate

active

07859027

ABSTRACT:
A back irradiating type solid state imaging device comprises: a first semiconductor substrate; a plurality of photoelectric converting devices that receives a light incident from a back side of the first semiconductor substrate and are formed in a two-dimensional array on a surface side of the first semiconductor substrate; a CCD type signal reading section that are formed on the surface side of the first semiconductor substrate and reads detection signals of the photoelectric converting devices; and a MOS type signal reading section that are formed on the surface side of the first semiconductor substrate and reads detection signals of the photoelectric converting devices.

REFERENCES:
patent: 7498650 (2009-03-01), Lauxtermann
patent: 2821062 (1998-11-01), None
patent: 2006-32497 (2006-02-01), None

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