Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1994-12-16
1997-01-28
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257228, 257436, 257447, 257448, 257449, 257451, 257455, H01L 27148
Patent
active
055980163
ABSTRACT:
Disclosed is a photoelectric conversion device in which a photodiode capacitance is increased. A transparent electrode is formed between a reflecting plate and a photodiode constituting a unitary picture element of a CCD image sensor. It is so formed that light is incident from the rear surface and the loop of the standing wave of the light comes on a platinum silicide film, thereby achieving the effective absorption of the incident light. The transparent electrode is formed between the reflecting plate and the photodiode in opposition to the platinum silicide film. The capacitance between the transparent electrode and the platinum silicide film can be utilized as photodiode capacitance. Optically optimum thickness is assured by individually forming the reflecting plate which optimizes optical properties represented by the absorption of the incident light, and the transparent electrode used for increasing the photodiode capacitance, and also applying a pulse voltage to the transparent electrode at a given timing in such a manner that the potential at the time of resetting of the photodiode potential is lower than that obtained when the charge is accumulated.
REFERENCES:
patent: 4857797 (1989-08-01), McNutt
patent: 5001532 (1991-03-01), Petroff
patent: 5416344 (1995-05-01), Ishizuya et al.
Tanabe, et al.; "Utilizing an Optical Cavity to Increase the Saturation Level in a Schottky-Barrier IR Image Sensor," SPIE, vol. 2020 Infrared Technology XIX, Jul. 1993 pp. 22-29.
Walter Kosonocky, Optoelectronic vol. 6, No. 2, Review of Infrared Image . . . , Dec. 1991, pp. 173-203.
Walter Kosonocky, SPIE vol. 1685, State-of-Art . . . , 1992, pp. 2-19.
Elabd et al. RCA Review vol. 43, Theory and Measurements of . . . Dec. 1982, pp. 569-589.
Tanabe Akihito
Tohyama Shigeru
Guay John F.
Jackson Jerome
NEC Corporation
LandOfFree
Back-illuminated type photoelectric conversion device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Back-illuminated type photoelectric conversion device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Back-illuminated type photoelectric conversion device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-942905