Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure
Reexamination Certificate
2005-05-17
2005-05-17
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Light responsive structure
C257S187000, C257S188000, C257S189000, C257S191000, C257S190000, C257S438000, C257S458000
Reexamination Certificate
active
06894322
ABSTRACT:
A highly reflecting back illuminated diode structure allows light that has not been absorbed by a semiconductor absorbing region to be back reflected for at least a second pass into the absorbing region. The diode structure in a preferred embodiment provides a highly reflecting layer of gold to be supported in part by a conducting alloyed electrode ring contact and in part by a passivation layer of SixNy. Conveniently this structure provides a window within the contact which allows light to pass between the absorbing region and the reflecting layer of gold.
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Ben-Michael Rafael
Itzler Mark
Kwan Steven
Allen Dyer Doppelt Milbrath & Gilchrist, P.A.
Erdem Fazli
Flynn Nathan J.
JDS Uniphase Corporation
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