Back-illuminated photodiode with a wide bandgap cap layer

Details Back-illuminated photodiode with a wide bandgap cap layer Back-illuminated photodiode with a wide bandgap cap layer

1984-05-11

1986-08-26

Welsh, John D.

Radiant energy

Ionic separation or analysis

Static field-type ion path-bending selecting means

357 16, 250211J, H01L 2714

Patent

active

046085866

ABSTRACT:
In.sub.0.53 Ga.sub.0.47 As p-i-n photodiodes with room temperature dark currents as low as 0.1 nA at -10 V bias are realized by introducing a wide bandgap (e.g., quaternary InGaAsP) cap layer on the ternary InGaAs.

REFERENCES:
patent: 4068252 (1978-01-01), Lebailly
"Low Dark-Current, High-Efficiency Planar In.sub.0.53 Ga.sub.0.47 As/InP P-I-N Photodiodes", IEEE Electron Device Letters, vol. EDL-1, No. 11, Nov. 1981, pp. 283-285, S. R. Forrest et al.
"InGaAs Planar Photodiode with a Window Layer", 1981 Domestic Meeting of the Semiconductors and Materials Division, the Institute of Electronics and Communication Engineers of Japan, Y. Tashiro et al., pp. 1-4.

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