Back illuminated photodiode array, manufacturing method and...

Heating systems – Heat radiators

Reexamination Certificate

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C257S098000, C250S370110

Reexamination Certificate

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07810740

ABSTRACT:
A plurality of the recessed portions are formed in an array on the opposite surface side of the semiconductor substrate and a second conductive type semiconductor region composed of a second conductive type semiconductor is formed at bottoms of a plurality of the recessed portions to obtain photodiode arrays arranged in an array.

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B.F. Levine et al., 20 GHz high performance planar Si/InGaAs p-i-n photodetector,Applied Physics Letters, AIP, American Institute of Physics, Melville, NY, vol. 70, No. 18, May 5, 1997, pp. 2449-2451.
Office Action in a Related Korean Application, dated Mar. 23, 2010, 5 pages.

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