Back illuminated photodetector

Details Back illuminated photodetector Back illuminated photodetector

2011-06-21

2011-06-21

Jackson, Jr., Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

C257S222000, C257SE31117

Reexamination Certificate

active

07964898

ABSTRACT:
The present invention provides a back illuminated photodetector having a sufficiently small package as well as being capable of suppressing the scattering of to-be-detected light and method for manufacturing the same. A back illuminated photodiode 1 comprises an N-type semiconductor substrate10, a P+-type impurity semiconductor region11, a recessed portion12, and a window plate13. In the surface layer on the upper surface S1 side of the N-type semiconductor substrate10is formed the P+-type impurity semiconductor region11. In the rear surface S2of the N-type semiconductor substrate10and in an area opposite the P+-type impurity semiconductor region11is formed the recessed portion12that functions as an incident part for to-be-detected light. Also, the window plate13is bonded to the outer edge portion14of the recessed portion12. The window plate13covers the recessed portion12and seals the rear surface S2of the N-type semiconductor substrate10.

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