Back-illuminated imaging device and method of fabricating same

Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Including isolation structure

Reexamination Certificate

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C257SE21566, C438S481000

Reexamination Certificate

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11350546

ABSTRACT:
A method for fabricating a back-illuminated semiconductor imaging device on a thin semiconductor-on-insulator substrate, and resulting imaging device. Resulting device has a monotonically varying doping profile which provides a desired electric field and eliminates a dead band proximate to the backside surface.

REFERENCES:
patent: 5227313 (1993-07-01), Gluck et al.
patent: 5270221 (1993-12-01), Garcia et al.
patent: 6498073 (2002-12-01), Sarma et al.
patent: 2005/0079690 (2005-04-01), Suka et al.

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