Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies
Reexamination Certificate
2009-05-27
2010-12-21
Mulpuri, Savitri (Department: 2812)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Subsequent separation into plural bodies
C257SE21568, C438S464000
Reexamination Certificate
active
07855128
ABSTRACT:
A method for fabricating a back-illuminated semiconductor imaging device on an ultra-thin semiconductor-on-insulator substrate (UTSOI) is disclosed. The UTSOI substrate is formed by providing a handle wafer comprising a mechanical substrate and an insulator layer substantially overlying the mechanical substrate. A donor wafer is provided. Hydrogen is implanted in the donor wafer to form a bubble layer. The donor wafer is doped with at least one dopant to form a doped layer proximal to the bubble layer. The handle wafer and the donor wafer are bonded between the insulator layer of the handle wafer and a surface of the donor wafer proximal to the doped layer to form a combined wafer having a portion substantially underlying the bubble layer. The portion of the combined wafer substantially underlying the bubble layer is removed so as to expose a seed layer. An epitaxial layer is grown substantially overlying the seed layer, wherein at least one dopant diffuse into the epitaxial layer. At the completion of the growing of the epitaxial layer, there exists a net dopant concentration in the seed layer and the epitaxial layer which has maximum value at or near an interface between the seed layer and the insulator layer.
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International Search Report of PCT/US2009/45294 dated Jul. 21, 2009.
Bhaskaran Mahalingam
Levine Peter Alan
Swain Pradyumna Kumar
Zhu Rui
Lowenstein & Sandler PC
Mulpuri Savitri
Sarnoff Corporation
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