Back-gated field emission electron source

Details Back-gated field emission electron source Back-gated field emission electron source

2011-02-22

2011-02-22

Matthews, Colleen A (Department: 2811)

Electric lamp and discharge devices

Electrode and shield structures

Cathodes containing and/or coated with electron emissive...

C257S010000, C257SE29005, C977S939000

Reexamination Certificate

active

07893605

ABSTRACT:
A field emitter device consistent with certain embodiments has a substantially planar conductor forming a gate electrode. A conductive stripe forms a cathode on the insulating layer. An insulating layer covers at least a portion of the surface between the cathode and the gate. An anode is positioned above the cathode. An emitter structure, for example of carbon nanotubes is disposed on a surface of the cathodes closest to the anode. When an electric field is generated across the insulating layer, the cathode/emitter structure has a combination of work function and aspect ratio that causes electron emission from the emitter structure toward the anode at a field strength that is lower than that which causes emissions from other regions of the cathode. This abstract is not to be considered limiting, since other embodiments may deviate from the features described in this abstract.

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