Back gate bias voltage generator circuit

Details Back gate bias voltage generator circuit Back gate bias voltage generator circuit

1978-08-30

1981-04-07

Anagnos, Larry N.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307304, 365228, H03K 335, H03L 100, H03K 3353

Patent

active

042609097

ABSTRACT:
A back gate bias voltage generator circuit consists of three MOS transistors (Q4, Q5, Q6) with a separate load element (Q1, Q2, Q3) coupled to the drain of each and a voltage clamp (Q7) connected to an output terminal (16). A terminal at the potential of a power supply (VCC) serves as one input and a terminal at the substrate potential (VSub) serves as another input. When the power supply (VCC) potential and the substrate potential are within normal operating ranges, the output terminal (16) assumes a reference potential (VSS). The potential of the output terminal increases in magnitude if either of the two input potentials (VSS, VSub) goes outside preselected operating ranges.

REFERENCES:
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patent: 3806741 (1974-04-01), Smith
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patent: 4016434 (1977-04-01), DeFilippi
patent: 4049980 (1977-09-01), Maitland
patent: 4068134 (1978-01-01), Tobey, Jr. et al.
patent: 4115710 (1978-09-01), Lou
patent: 4142114 (1979-02-01), Green
patent: 4156153 (1979-05-01), Szechenyi
Hummel, "Sentry Circuit for Substrate Voltage Control", IBM Tech. Discl. Bull., vol. 15, No. 2, pp. 478-479, 7/1972.
Frantz, "Threshold Voltage Control for N-Channel MOSFET Devices", IBM Tech. Discl. Bull., vol. 12, No. 12, p. 201, 5/1970.
Pleshko et al., "MOS Transistor Electronic Stabilization of Thresholds", IBM Tech. Discl. Bull., vol. 10, No. 3, pp. 336-337, 8/1967.
Kubo et al., 1976 IEEE Int'l. Solid-State Circuits Conf., pp. 54-55, 2/18/76.

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