Optics: measuring and testing – Shape or surface configuration
Reexamination Certificate
2007-05-25
2008-08-19
Nguyen, Sang (Department: 2886)
Optics: measuring and testing
Shape or surface configuration
C356S612000, C356S364000, C356S367000
Reexamination Certificate
active
07414733
ABSTRACT:
A structure formed on a semiconductor wafer is examined by obtaining measurements of cross polarization components of diffraction beams, which were obtained from scanning an incident beam over a range of azimuth angles to obtain an azimuthal scan. A zero azimuth position is determined based on the azimuthal scan. The cross polarization components are zero at the zero azimuth position. A measured diffraction signal is obtained using an azimuth angle to be used in optical metrology of the structure. Misalignment of the azimuth angle is detected using the measured diffraction signal and the determined zero azimuth position.
REFERENCES:
patent: 4516159 (1985-05-01), Diepeveen
patent: 4606645 (1986-08-01), Matthews et al.
patent: 4672196 (1987-06-01), Canino
patent: 4837603 (1989-06-01), Hayashi
patent: 4898471 (1990-02-01), Vaught et al.
patent: 5042951 (1991-08-01), Gold et al.
patent: 5076692 (1991-12-01), Neukermans et al.
patent: 5432607 (1995-07-01), Taubenblatt
patent: 5883710 (1999-03-01), Nikoonahad et al.
patent: 5979244 (1999-11-01), Michaelis
patent: 6020957 (2000-02-01), Rosengaus et al.
patent: 6031614 (2000-02-01), Michaelis et al.
patent: 6323947 (2001-11-01), Freeouf
patent: 6448097 (2002-09-01), Singh et al.
patent: 6486946 (2002-11-01), Stover et al.
patent: 6538730 (2003-03-01), Vaez-Iravani et al.
patent: 6608690 (2003-08-01), Niu et al.
patent: 6609086 (2003-08-01), Bao et al.
patent: 6785638 (2004-08-01), Niu et al.
patent: 6816249 (2004-11-01), Fairley et al.
patent: 6819426 (2004-11-01), Sezginer et al.
patent: 6891626 (2005-05-01), Niu et al.
patent: 6939145 (2005-09-01), Hembree et al.
patent: 6943900 (2005-09-01), Niu et al.
patent: 2004/0267397 (2004-12-01), Doddi et al.
Bischoff Joerg
Li Shifang
Niu Xinhui
Morrison & Foerster / LLP
Nguyen Sang
Timbre Technologies, Inc.
LandOfFree
Azimuthal scanning of a structure formed on a semiconductor... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Azimuthal scanning of a structure formed on a semiconductor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Azimuthal scanning of a structure formed on a semiconductor... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4000911