Azimuthal scanning of a structure formed on a semiconductor...

Details Azimuthal scanning of a structure formed on a semiconductor... Azimuthal scanning of a structure formed on a semiconductor...

2007-05-29

2007-05-29

Nguyen, Sang H. (Department: 2877)

Optics: measuring and testing

Shape or surface configuration

C356S364000, C356S367000

Reexamination Certificate

active

10696246

ABSTRACT:
A structure formed on a semiconductor wafer is examined by directing an incident beam at the structure at an incidence angle and a azimuth angle. The incident beam is scanned over a range of azimuth angles to obtain an azimuthal scan. The cross polarization components of diffracted beams are measured during the azimuthal scan.

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