Avoiding spin-on-glass cracking in high aspect ratio cavities

Details Avoiding spin-on-glass cracking in high aspect ratio cavities Avoiding spin-on-glass cracking in high aspect ratio cavities

1991-02-05

1992-06-02

Jackson, Jr., Jerome

357 71, H01L 2934, H01L 2348, H01L 2946

Patent

active

051191644

ABSTRACT:
Before spin-on-glass (SOG) is applied and soft-cured over metal traces (10) having a height/width aspect ratio (of the spaces) of at least 1, the aluminum metal traces are selectively coated with selective tungsten (16). After SOG (18) is spun on and soft-cured, it is etched back to expose the metal interconnects. A selective tungsten wet etch in H.sub.2 O.sub.2 detaches the SOG from the metal walls, leaving silt-like voids (20). Stress-free SOG hard curing may now proceed. A capping layer (22) of SOG may now be applied, soft-cured, then hard-cured. Alternatively, other dielectric materials may be applied as the capping layer. Further, interfacial lateral sidewall voids (24) may be deliberately left unfilled, by employing a capping layer (24') of vapor-deposited oxide. The unfilled voids have a dielectric constant of 1.0, which is useful in extremely high speed devices. The resulting structure is comparatively stress-free as fabricated and is resistant to later environmentally-induced brittle tensile fracture.

REFERENCES:
"Webster's Dictionary" .COPYRGT.1984 p. 130.
IBM Tech. Disclosure Bulletin, "3-Dimensional Dual Insulator Memory" Arnett, vol. 16 No. 11 Apr. 1974 p. 3517.
IBM Tech. Dislclosure Bulletin, "Encapsulation For Semiconductor Device" Gates, vol. 8 No. 11 Apr. 1966 p. 1687.
IBM Tech. Disclosure Bulletin, "Adhesion of Dielectrics to Noble Metal Via Electroless Deposition" vol. 18 #5 Oct. 1975 pp. 1636 Romankiw.

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