Avalanche semiconductor amplifier

Amplifiers – Signal feedback – Combined with control of bias voltage of signal amplifier

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357 65, 357 68, 357 69, H03F 310

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039654370

ABSTRACT:
A microwave semiconductor amplifier or oscillator system in which a semiconductor device has an avalanching region at a junction and a heat sink having a higher thermal conductivity than said avalanching region in close thermal contact with the said junction. The avalanching region has a width substantially less than ten times the thickness of said avalanching region but a length substantially greater than said width. The heat sink is made substantially wider than that of the avalanching region so that heat generated in the avalanching region during operation of the system and moving into the heat sink will have a substantial component thereof moving parallel to the junction, thereby decreasing the thermal resistance between the heat source and the heat sink and hence permitting an increased power output from the system. The thermal resistance between the avalanching region and the heat sink is further reduced by the use of a Schottky type junction in which a thin layer of platinum is deposited on gallium arsenide N type semiconductor material and a gold heat sink is deposited on the platinum layer.

REFERENCES:
patent: 3387359 (1968-06-01), Dale et al.
patent: 3490051 (1970-03-01), Hakki et al.
patent: 3628187 (1971-12-01), Deloach, Jr.
Electronic Design, p. 120, Apr. 12, 1967.
Solid State Electronics, Kim et al., pp. 53-55, Jan. 1970.
Proceedings of IEEE-LEE et al., pp. 1153, 1154, July, 1970.
Electronic Design, p. 28, Nov. 22, 1970.

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