Avalanche radiation detector

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

Reexamination Certificate

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Details

C257S257000, C257S258000, C257S263000, C257S460000, C257S462000

Reexamination Certificate

active

07098519

ABSTRACT:
The invention relates to an avalanche radiation detector comprising a semiconductor substrate (HK) with a front side (VS) and a back side (RS), an avalanche region (AB) which is arranged in the semiconductor substrate (HK) on the front side (VS) of the semiconductor substrate (HK) and a control electrode (R) for adjusting the electric field strength in the avalanche region (AB). It is proposed that the control electrode (R) is also arranged on the front side of the semiconductor substrate (HK).

REFERENCES:
patent: 4607508 (1986-08-01), Sando et al.
patent: 4654678 (1987-03-01), Lightstone et al.
patent: 4729963 (1988-03-01), Tabatabaie
patent: 5057891 (1991-10-01), Torikai
patent: 6858463 (2005-02-01), Bond
patent: 1 577 633 (1970-03-01), None
patent: 0 003 790 (1979-09-01), None
patent: 0 173 519 (1986-03-01), None
patent: 2 072 052 (1981-09-01), None
patent: 10284754 (1998-10-01), None
Curt Rint: “Handbuch fur Hochfrequenz-und Elektrotechniker”, 12. Auglage, Huthig und Pflaum Verlag Munchen/Heidelberg, p. 478.

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