Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2006-08-29
2006-08-29
Ngô, Ngân V. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S257000, C257S258000, C257S263000, C257S460000, C257S462000
Reexamination Certificate
active
07098519
ABSTRACT:
The invention relates to an avalanche radiation detector comprising a semiconductor substrate (HK) with a front side (VS) and a back side (RS), an avalanche region (AB) which is arranged in the semiconductor substrate (HK) on the front side (VS) of the semiconductor substrate (HK) and a control electrode (R) for adjusting the electric field strength in the avalanche region (AB). It is proposed that the control electrode (R) is also arranged on the front side of the semiconductor substrate (HK).
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Curt Rint: “Handbuch fur Hochfrequenz-und Elektrotechniker”, 12. Auglage, Huthig und Pflaum Verlag Munchen/Heidelberg, p. 478.
Lutz Gerhard
Richter Rainer H.
Struder Lothar
Gallagher & Kennedy P.A.
MacBlain Thomas D.
Max-Planck-Gesellschaft zur Forderung der Wissenchafter E.V.
Ngo Ngan V.
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