Static information storage and retrieval – Floating gate – Particular connection
Patent
1998-12-23
2000-12-05
Nelms, David
Static information storage and retrieval
Floating gate
Particular connection
36518501, G11C 1134
Patent
active
061575682
ABSTRACT:
A non-volatile memory cell structure which includes a floating gate, at least one injection element and a sense transistor. The injection element is at least partially formed in a first polysilicon layer. The floating gate is provided in a second polysilicon layer and capacitively coupled to the reverse breakdown element. The sense transistor is at least partially formed in a region of a semiconductor substrate, and connected to the floating gate. The structure may further comprise a control gate capacitively coupled to the floating gate and may be formed in said first polysilicon layer.
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"Performance Limitations of a Flash E.sup.2 PROM Cell, Programmed with Zener Induced Hot Electrons", by J. Ranaweera, I. Kalastirsky, A. Dibu-Caiole, W.T. Ng, and C.A.T. Salama, Proceedings, of the 15th Annual Non-Volatile Semiconductor Memory Workshop, Paper #2.2 (1997).
Nelms David
Tran M.
Vantis Corporation
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