Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1993-05-07
1997-02-11
Larkins, William D.
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257462, 257465, 257589, H01L 3111
Patent
active
056024134
ABSTRACT:
A bipolar avalanche phototransistor has a thin, heavily doped base portion adjacent the collector to improve avalanche characteristics. The structure may have a lateral, as well as vertical, collector, with the thin heavily doped base portion adjoining the surface lateral collector.
REFERENCES:
patent: 3714526 (1973-01-01), Low et al.
patent: 3886579 (1975-05-01), Ohuchi et al.
Campbell et al, IEEE Trans. on Electron Devices, vol. ED30 No. 4 Apr. 1983, pp. 408-411.
A. Chin, et al., "A Controlled-Avalanche Superlattice Transistor", IEEE Proceedings/Cornell Conference on Advanced Concepts in Highspeed Semiconductor Devices and Circuits, pp. 255-264, Aug. 1987.
C. Y. Chen, et al., "GaAs/Al.sub.x Ga.sub.1-x As Depletion Stop Phototransistor Grown By Molecular Beam Epitaxy", Applied Physics Letters, pp. 510-512, Mar. 15, 1982.
Canon Kabushiki Kaisha
Larkins William D.
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