Avalanche photodiodes

Details Avalanche photodiodes Avalanche photodiodes

1981-07-08

1984-04-10

Edlow, Martin H.

357 30, 357 52, 357 16, H01L 2990

Patent

active

044424442

ABSTRACT:
An avalanche photodiode sensitive to wavelengths ranging from 1.2 to 1.65 micrometers and comprising a light absorbing layer and first and second window layers of a semiconductor having a band gap larger than the semiconductor of the light-absorbing layer respectively grown on a substrate, is disclosed. All the layers are doped with the same conductivity type impurity but the doping concentration is higher for the second window layer than for the first window layer. A p-n junction for avalanche multiplication is formed in the second window layer and another deep p-n junction providing a guard ring effect is formed surrounding the avalanche p-n junction to reach the first window layer but remaining a specific distance above the heterojunction between the first window layer and the light absorbing layer. Under a reverse bias, a much deeper depletion region extends in the region comprising the guard ring p-n junction than in the region comprising the avalanche p-n junction, thereby breakdown is limited exclusively to and uniformly occurs in the region comprising the avalanche p-n junction, resulting in higher avalanche-gains, sensitivity and response and with lower values of dark-current an noise. In addition, an improved method for producing the avalanche photodiode is disclosed.

REFERENCES:
patent: 4153904 (1979-05-01), Tash, Jr.
patent: 4258375 (1981-03-01), Hsieh
patent: 4323909 (1982-04-01), Valdmann
patent: 4326211 (1982-04-01), Smeets
patent: 4383266 (1983-05-01), Sakai et al.
Matsushima, Jpn. J. Appl., vol. 19, Jul. 1980, No. 7.

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