Avalanche photodiode with semiconductor hetero structure

Details Avalanche photodiode with semiconductor hetero structure Avalanche photodiode with semiconductor hetero structure

1979-06-21

1981-06-16

Edlow, Martin H.

357 16, 357 30, H01L 2990, H01L 29161, H01L 2714

Patent

active

042741033

ABSTRACT:
An avalanche photodiode with a semiconductor hetero structure, in which a light absorbing region and an avalanche multiplying region where avalanche gain is attained are formed of different materials. The different materials may be two compound semiconductors of different compositions. The lattice constants of the two compound semiconductors may be matched with each other.

REFERENCES:
patent: 4110778 (1978-08-01), Eden et al.
patent: 4212019 (1980-07-01), Wataze

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