Avalanche photodiode with reduced avalanche breakdown voltage

Details Avalanche photodiode with reduced avalanche breakdown voltage Avalanche photodiode with reduced avalanche breakdown voltage

1977-02-08

1978-04-04

Edlow, Martin H.

357 30, 357 89, 357 90, H01L 2990

Patent

active

040830624

ABSTRACT:
An avalanche photodiode has a rectification barrier formed by an n.sup.+ -layer and a p-type layer of a low doping concentration. A thin p-layer having a higher doping concentration than a p.sup.- -layer is inserted between the p.sup.- -layer and a .pi.-layer, whereby the avalanche breakdown voltage of the photodiode is lowered considerably.

REFERENCES:
patent: 3621466 (1971-11-01), Misawa
patent: 3668555 (1972-06-01), Kasperkovitz
patent: 3814997 (1974-06-01), Takahashi
patent: 3886579 (1975-05-01), Ohuchi
patent: 3921092 (1975-11-01), Goronkin
patent: 3992715 (1976-11-01), Delagebeaudeuf

Affiliated with

Also associated with

Rating

Avalanche photodiode with reduced avalanche breakdown voltage does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Avalanche photodiode with reduced avalanche breakdown voltage, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Avalanche photodiode with reduced avalanche breakdown voltage will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-726313