Avalanche photodiode with moisture resistant passivation coating

Details Avalanche photodiode with moisture resistant passivation coating Avalanche photodiode with moisture resistant passivation coating

1993-04-02

1994-02-22

Nelms, David C.

Radiant energy

Photocells; circuits and apparatus

Photocell controlled circuit

2502081, 257186, H01J 4014

Patent

active

052889890

ABSTRACT:
An avalanche photodiode (APD) has a two tier passivation layer disposed over the silicon APD body. The passivation layer includes an inorganic moisture barrier layer and an organic dielectric layer. The inorganic material forming this layer is preferably silicon nitride or silicon oxide, and the organic dielectric material is a polyimide or benzocyclobutene.

REFERENCES:
patent: 4780394 (1988-10-01), Blanchard et al.
patent: 5233181 (1993-08-01), Kwansnick et al.
patent: 5243177 (1993-09-01), Fujimagari et al.
Technical proposal entitled, "Solid-State Avalanche Photodiode Detector Array Technology for Medical, Environmental, and Research Applications," submitted to National Institute of Standards & Technology as confidential, proprietary information, dated Feb. 23, 1993, pp. 5-13 5-16.
"Benzocyclobutene (BCB) Dielectrics for the Fabrication of High Density, Thin Film Multichip Modules," David Burdeaux et al., AIME, Jun. 22, 1990, revised Aug. 15, 1990, pp. 1357-1367.

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