Avalanche photodiode with hetero-periodical structure

Details Avalanche photodiode with hetero-periodical structure Avalanche photodiode with hetero-periodical structure

1992-01-27

1993-04-20

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257187, 257186, 257438, 257185, H01L 2714

Patent

active

052045390

ABSTRACT:
An avalanche photodiode includes an avalanche multiplication layer of a hetero-periodical structure consisting of alternately provided barrier and well layers. Each barrier layer includes a multi-quantum barrier layer consisting of alternately provided short-width barrier and well layers. The barrier and well layers include respectively first and second III-group elements which meet the following conditions:

REFERENCES:
patent: 4731641 (1988-03-01), Matsushima et al.
patent: 4942436 (1990-07-01), Vetterling
V. Lehman and U. Gosele, "Porous Silicon Formation: A Quantum Wire Effect", Applied Physics Letters, vol. 58, No. 8, Feb. 25, 1991, pp. 856-858.
L. T. Canhan, "Silicon Quantum Wire Array Fabrication by Electrochemical and Chemical Dissolution of Wafers", Applied Physics Letters, vol. 57, No. 10, Sep. 3, 1990, pp. 1046-1048.

Affiliated with

Also associated with

Rating

Avalanche photodiode with hetero-periodical structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Avalanche photodiode with hetero-periodical structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Avalanche photodiode with hetero-periodical structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1527719