Avalanche photodiode with floating guard ring

Details Avalanche photodiode with floating guard ring Avalanche photodiode with floating guard ring

1988-01-06

1989-08-15

Hille, Rolf

357 16, 357 52, 357 58, 357 54, H01L 2714

Patent

active

048579823

ABSTRACT:
The disclosed invention as direction to a semiconductor material avalanche photodiode of a separate multiplication and absorption region heterostructure design (SAM-APD). The improved SAM-APD of this invention is characterized by a plurality of floating guard rings which are separated about a central region and doped in the opposite high concentration from that of the multiplication region in which they are positioned. These rings float in the sense that they have no contact with the metalized p-contact of the photodiode; and, therefore, no direct contact with the current source. This structure results in an enhanced avalanche effect in the central region with limited edge breakdown undesirable consequences. In addition to this structure, an alternative embodiment suggests the use of both a floating ring and this slab below the central region, of a dimension slightly smaller than the smaller region and concentric with it to achieve an optimized central avalanche breakdown with reduced edge breakdown of the electric fields formed during reversed biasing of the APD (avalanche photodiode).

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