Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure
Patent
1995-02-16
1997-03-11
Ng o, Ng an V.
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Light responsive structure
257438, 257466, H01L 310328, H01L 310336, H01L 31072, H01L 31109
Patent
active
056104162
ABSTRACT:
A SAM avalanche photodiode formed with an epitaxially regrown guard ring and a planar P-N junction defined between a cap layer and a multiplication layer. The multiplication layer is part of a multi-layer semiconductor platform having a conductivity opposite to the conductivity type of the cap layer, including a light absorption layer, a substrate and an intermediate layer. A second embodiment of the present invention is disclosed including a SAM avalanche photodiode having a guard ring with a variable distribution of impurity dopant concentrations. In addition, a third embodiment of the present invention is disclosed in which a narrow band gap layer completely covers the cap layer and a non-alloy metal contact is formed to completely cover the narrow band gap layer, forming a mirror junction. In this embodiment, incident light is shined through the substrate and reflected from the mirror junction, enhancing the absorption efficiency.
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Hasnain Ghulam
Hollenhorst James N.
Su Chung-Yi
Hewlett--Packard Company
Ng o Ng an V.
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