Patent
1988-06-09
1990-04-03
Mintel, William
357 58, 357 16, 357 56, 357 90, H01L 2714
Patent
active
049144944
ABSTRACT:
The invention relates to an avalanche photodetector having a charge-multiplication region which is spatially separated from the detector surface. This photodetector includes a light-absorptive region, an active region overlying the absorptive region forming a heterojunction therebetween. The photodetector includes a central zone which has a greater concentration of conductivity modifiers than the remainder of the active region and is located in the active region extending into the absorptive region. A cap region overlies the active region and has the opposite conductivity type. The cap region extends a greater distance in the lateral direction than the central zone. A photodetector having a central zone extending across the heterojunction between the active region and light absorptive region have exhibited response times comparable with those of photodetectors having a quaternary layer located between the active region and the absorptive region. However, the photodetector of the present invention does not require the hard-to-grow quaternary layer.
REFERENCES:
patent: 4116733 (1978-09-01), Olsen
patent: 4142200 (1979-02-01), Mizushima et al.
patent: 4326211 (1982-04-01), Smeets
patent: 4442444 (1984-04-01), Osaka
patent: 4481523 (1984-11-01), Osaka
patent: 4586066 (1986-04-01), McIntyre
patent: 4586067 (1986-04-01), Webb
patent: 4587544 (1986-05-01), Webb
patent: 4654678 (1987-03-01), Lightstone et al.
patent: 4656494 (1987-04-01), Kobayashi et al.
patent: 4700209 (1987-10-01), Webb
G. H. Olsen et al., Journal of Electronic Materials, vol. 9, No. 6, 1980, pp. 977-987.
G. H. Olsen, GaInAsP Alloy Semiconductors, T. P. Pearsall, Editor John Wiley & Sons (New York 1982) pp. 11-41.
F. Capasso et al., Technical Digest of 1984 Optical Fiber Conference, Jan. 23-25, 1984, New Orleans, La., pp. 88-89.
Patent Abstracts of Japan, vol. 8, No. 53, Mar. 9, 84, Yamazaki-JP 58-206178(A)-"Manufacture of Semiconductor Light Receiving Device".
Patent Abstracts of Japan, vol. 10, No. 11, Jan. 17, 1986, Torikai-JP 60-173880, "Semiconductor Photodetector and Manufacture Thereof".
Patent Abstracts of Japan, vol. 8, No. 285, Dec. 26, 1984, Matsushima-JP 59-151475-"Hetero-Structure Avalanche-Photodiode with Buffer".
Eckersley Raymond A.
Mintel William
RCA Inc.
LandOfFree
Avalanche photodiode with central zone in active and absorptive does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Avalanche photodiode with central zone in active and absorptive , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Avalanche photodiode with central zone in active and absorptive will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1361443