Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1994-06-08
1995-10-10
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257185, 257186, 257191, 257438, H01L 2714
Patent
active
054573270
ABSTRACT:
The invention provides an avalanche photodiode multilayer structure comprising an absorption layer for absorbing photons and subsequent generation of electron hole pairs, a field relaxation layer in contact with the absorption layer and a multiplication layer in contact with the field relaxation layer. The multiplication layer comprises a plurality of periods of first and second layers. The first layer has a first graded energy band gap being gradually increased in a direction toward which traveling electrons are being accelerated by a predetermined electric field. The second layer has a second graded energy band gap being gradually decreased in the same direction. Both a conduction band edge and a valance band edge are free from any discontinuities and are sloped down toward the same direction through the first and second layers when the first and second layers are being applied with the electric field.
REFERENCES:
Capasso et al., "Pseudo-Quaternary GaInAsP Semiconductors: A New Ga.sub.0.47 In.sub.0.53 As/InP Graded Cap Superlattice And Its Applications To Avalanche Photodiodes", Appl. Phys. Lett. 45(11), 1 Dec. 1984, pp. 1193-1195.
By R. Chin et al., "Impact Ionisation in Multilayered Heterojunction Structures", Electronics Letters, Jun. 5, 1980, vol. 16, No. 12, pp. 467-469.
By F. Capasso et al., "Staircase Solid-State Photomultipliers and Avalanche Photodiodes with Enhanced Ionization Rates Ratio", IEEE Transactions on Electron Devices, Apr. 1983, vol. ED-30, No. 4, pp. 381-390.
By K. Mohammed et al., "New high-speed long-wavelength Al.sub.0.43 In.sub.0.52 As/Ga.sub.0.53 As multiquantum wall avalanche photo-diodes", Applied Physic Letters, Sep. 15, 1985, vol. 47, No. 15, pp. 597-599.
By T. Kagawa et al., "Impact ionization rates in an InGaAs/InAlAs superlattice", Applied Physic Letters, Sep. 4, 1989, vol. 55, No. 10, pp. 993-995.
Mintel William
NEC Corporation
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