Avalanche photodiode with AliNAsP cap layer

Details Avalanche photodiode with AliNAsP cap layer Avalanche photodiode with AliNAsP cap layer

1991-07-08

1993-02-23

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257187, 257438, 257185, H01L 2714

Patent

active

051893096

ABSTRACT:
A photodiode having a GaInAs light-absorbing layer on an InP substrate which can reduce temperature dependence of the spectral responsivity as well as enable the optical power measurement with less dependence on the incident light spectral width by using a material with smaller composition ratio of Ga for the light-absorbing layer to extend the absorption edge toward the longer wavelengths.

REFERENCES:
patent: 4684969 (1987-08-01), Taguchi
patent: 4906583 (1990-03-01), Kagawa et al.
patent: 4982255 (1991-01-01), Tomita
Trommer et al., "In.sub.0.53 Ga.sub.0.47 /InP Pin and Avalanche Photodiodes for the 1 .mu.m to 1.6 .mu.m Wavelength Range," Siemens Forsch.-u. Entwickl.-Ber., vol 11 (1982), No. 4, pp. 216-220.

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